HY62KF16403E

Features: Fully static operation and Tri-state outputTTL compatible inputs and outputsBattery backup -. 1.2V(min) data retentionStandard pin configuration-. 44pin 400mil TSOP-II (Forward)PinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output Voltage -0.3...

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HY62KF16403E Picture
SeekIC No. : 004368362 Detail

HY62KF16403E: Features: Fully static operation and Tri-state outputTTL compatible inputs and outputsBattery backup -. 1.2V(min) data retentionStandard pin configuration-. 44pin 400mil TSOP-II (Forward)PinoutSpeci...

floor Price/Ceiling Price

Part Number:
HY62KF16403E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup -. 1.2V(min) data retention
Standard pin configuration -. 44pin 400mil TSOP-II (Forward)



Pinout

  Connection Diagram


Specifications

Symbol Parameter Rating Unit Remark
VIN, VOUT Input/Output Voltage -0.3 to VCC+0.3V V  
Vcc Power Supply -0.3 to 4.6 V  
TA Operating Temperature -40 to 85 °C HY62KF16403E-I
TSTG Storage Temperature -55 to 150 °C  
PD Power Dissipation 1.0 W  
TSOLDER Ball Soldering Temperature & Time 260 · 10 °C·sec  



Description

The HY62KF16403E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62KF16403E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.




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