Features: Fully static operation and Tri-state outputTTL compatible inputs and outputsBattery backup -. 1.2V(min) data retentionStandard pin configuration-. 44pin 400mil TSOP-II (Forward)PinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Output Voltage -0.3...
HY62KF16403E: Features: Fully static operation and Tri-state outputTTL compatible inputs and outputsBattery backup -. 1.2V(min) data retentionStandard pin configuration-. 44pin 400mil TSOP-II (Forward)PinoutSpeci...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Symbol | Parameter | Rating | Unit | Remark |
VIN, VOUT | Input/Output Voltage | -0.3 to VCC+0.3V | V | |
Vcc | Power Supply | -0.3 to 4.6 | V | |
TA | Operating Temperature | -40 to 85 | °C | HY62KF16403E-I |
TSTG | Storage Temperature | -55 to 150 | °C | |
PD | Power Dissipation | 1.0 | W | |
TSOLDER | Ball Soldering Temperature & Time | 260 · 10 | °C·sec |
The HY62KF16403E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62KF16403E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.