HY62KF08802B

Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup-. 1.2V(min) data retention· Standard pin configuration-. 44pin 400mil TSOP-II (Forward)PinoutSpecifications Symbol Parameter Rating Unit Remark VIN, VOUT Input/Outpu...

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HY62KF08802B Picture
SeekIC No. : 004368361 Detail

HY62KF08802B: Features: · Fully static operation and Tri-state output· TTL compatible inputs and outputs· Battery backup-. 1.2V(min) data retention· Standard pin configuration-. 44pin 400mil TSOP-II (Forward)Pino...

floor Price/Ceiling Price

Part Number:
HY62KF08802B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

·  Fully static operation and Tri-state output
·  TTL compatible inputs and outputs
·  Battery backup
-. 1.2V(min) data retention
·  Standard pin configuration
-. 44pin 400mil TSOP-II (Forward)



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.3 to VCC+0.3V
V
Vcc
Power Supply
-0.3 to 4.6
V
TA
Operating Temperature
-40 to 85
°C
HY62KF08802B-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260 ·10
°C·sec
 
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.



Description

The HY62KF08802B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 1M words by 8bits. The HY62KF08802B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.




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