Features: · Fully static operation and Tri-state outputs· TTL compatible inputs and outputs· Low power consumption· Battery backup(L/LL-part) -. 2.0V(min) data retention· Standard pin configuration -. 32pin 525mil SOP -. 32pin 400mil TSOP-II (Standard and Reversed)PinoutSpecifications Symbo...
HY628400A: Features: · Fully static operation and Tri-state outputs· TTL compatible inputs and outputs· Low power consumption· Battery backup(L/LL-part) -. 2.0V(min) data retention· Standard pin configuration ...
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Features: ·Fully static operation andTri-state outputs ·TTL compatible inputsand outputs ·Low powe...
Symbol |
Parameter |
Rating |
Unit | |
Vcc, VIN, VOUT |
Power Supply, Input/Output Voltage |
-0.3 to 7.0 |
V | |
TA |
Operating Temperature | HY628400A |
0 to 70 |
°C |
HY628400A-E |
-25 to 85 |
°C | ||
HY628400A-I |
-40 to 85 |
°C | ||
TSTG |
Storage Temperature |
-65 to 150 |
°C | |
PD |
Power Dissipation |
1.0 |
W | |
IOUT |
Data Output Current |
50 |
mA | |
TSOLDER |
Lead Soldering Temperature & Time |
260 ·10 |
°C·sec |
The HY628400A is a high-speed, low power and 4M bits CMOS SRAM organized as 512K words by 8 bits. The HY628400A uses Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V.