HY5W6B6DLF(P)-xE

The Hynix Low Power SDRAM HY5W6B6DLF(P)-xE is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.

The Hynix HY5W6B6DLF(P)-xE is a 67,108,864bit CMOS Synchronous Dynamic Random Access Memory. It is organized as 4banks of 1,048,576x16.

The Low Power SDRAM HY5W6B6DLF(P)-xE provides for programmable options including CAS latency of 1, 2 or 3, READ or WRITE burst length of 1, 2, 4, 8, or full page, and the burst count sequence(sequential or interleave). And the Low Power SDRAM also provides for special programmable options including Partial Array Self Refresh of a quarter bank, a half bank, 1bank, 2banks, or all banks.

The Hynix HY5W6B6DLF(P)-xE has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implanted, it enables to automatically adjust refresh rate according to temperature without external EMRS command. A burst of Read or Write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any cycle(This pipelined design is not restricted by a 2N rule).

Deep Power Down Mode is a additional operating mode for Low Power SDRAM HY5W6B6DLF(P)-xE. This mode can achieve maximum power reduction by removing power to the memory array within each SDRAM. By using this feature, the system can cut off alomost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout flexibility.