Features: • VDD=1.8V• VDDQ=1.8V +/- 0.1V• All inputs and outputs are compatible with SSTL_18 interface• Fully differential clock inputs (CK, /CK) operation• Double data rate interface• Source synchronous-data transaction aligned to bidirectional data strobe (DQS...
HY5PS12421L: Features: • VDD=1.8V• VDDQ=1.8V +/- 0.1V• All inputs and outputs are compatible with SSTL_18 interface• Fully differential clock inputs (CK, /CK) operation• Double data...
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Features: • VDD=1.8V• VDDQ=1.8V +/- 0.1V• All inputs and outputs are compatible ...
PinoutDescriptionThe HY5PS121621FP-C4 has many unique features: (1) VDD is 1.8V; (2) VDDQ is 1.8V ...
PinoutDescriptionThe HY5PS121621FP-E3 is a kind of 512Mb DDR2 SDRAM. It is organized as a 32Mbit*1...
Symbol | Parameter | Rating | Units |
VDD |
Voltage on VDD pin relative to Vss 1 |
- 1.0 V ~ 2.3 V |
V |
VDDQ |
Voltage on VDDQ pin relative to Vss 1 |
- 0.5 V ~ 2.3 V |
V |
VDDL |
Voltage on VDDL pin relative to Vss 1 |
- 0.5 V ~ 2.3 V |
V |
VIN,VOUT |
Voltage on any pin relative to Vss 1 |
- 0.5 V ~ 2.3 V |
V |
TSTG |
Storage Temperature 1,2 |
-55 to +100 |
°C |
1. . Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the denter/top side of the DRAM. For the measurement conditions.Please refer to JESD51-2 standard