Features: • Extended data out operation• Read-modify-write capability• Multi-bit parallel test capability• LVTTL(3.3V) compatible inputs and outputs• /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability• JEDEC standard pinout 50pin plastic S...
HY51VS65163HG: Features: • Extended data out operation• Read-modify-write capability• Multi-bit parallel test capability• LVTTL(3.3V) compatible inputs and outputs• /RAS only, CAS-bef...
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Features: Extended data out operationRead-modify-write CapabilityTTL compatible inputs and outputs...
Features: Extended data out operationRead-modify-write CapabilityTTL compatible inputs and outputs...
Parameter |
Symbol |
Rating |
Unit |
Ambient Temperature |
TA |
0 ~ 70 |
|
Storage Temperature |
TSG |
-55 ~ 125 |
|
Voltage on Any Pin relative to VSS |
VT |
-0.5 ~ Vcc + 0.5 (Max 4.6V) |
V |
Voltage on VDD relative to VSS |
VCC |
-0.5 ~ 4.6 |
V |
Short Circuit Output Current |
IOUT |
50 |
mA |
Power Dissipation |
PT |
1 |
W |
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device HY51VS65163HG to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh).
Advanced CMOS process as well as circuit techniques for wide operating margins allow this device HY51VS65163HG to achieve high speed access and high reliability