HY27US08561M-TPCB

The HY27US08561M-TPCB belongs to the HY27US08561M series. It is a kind of 32 M x 8 bit high density NAND flash memory. It is offered in 3.3 V VCC power supply and in 1.8 V VCC power supply. It is available in the 48TSOP1 package.

There are some HY27US08561M-TPCB features as follows. (1) fast block erase time which is 2 ms; (2) electronical signature including manufacture code and device code; (3) chip enable"don't care" option; (4) automatic page 0 raed at power-up option; (5)hardware data protection; (6) data integrity which includes 10 years data retention.

The following is some information about HY27US08561M-TPCB's absolute maximum ratings. (1): temperature under bias (TBIAS) is from -50 to 125 ; (2): storage temperature (Tstg) is from -65 to 150 ; (3): input or output voltage (VIN,VOUT) ranges from -0.6 V to 2.7 V at 1.8 V devices and is from -0.6 V to 4.6 V at 3.3 V devices and is from -0.6 to 2.7 V at 1.8 devices; (4): supply voltage (VCC) is from -0.6 V to 2.7 V at 1.8 devices and is from -0.6 to 4.6 V at 3.3 devices; (5): the maximum input / output capacitance is 10 pF when VIL is 0 V; (6): the maximum input capacitance is 10 pF when VIN is 0 V. If you want more about its electrical characters,please download the datasheet at www.seekic.com.