HY27US08281A-TPCB

The HY27US08281A-TPCB belongs to the HY27US08281A series. It is a kind of 16 M x 8 bit high density NAND flash memory. It is offered in 3.3 V VCC power supply and in 1.8 V VCC power supply and it provides the most cost-effective solution for the solid state mass storage market.It is available in the 48-pin TSOP1 package which is lead free.

There are some HY27US08281A-TPCB features as follows. (1) fast block erase time which is 2 ms; (2) electronical signature including manufacture code and device code; (3) chip enable"don't care" option; (4) automatic page 0 raed at power-up option; (5)hardware data protection; (6) data integrity which includes 10 years data retention; (6) copy back program mode without external buffering; (7) serial number option.

The following is some information about HY27US08281A-TPCB's absolute maximum ratings at 3.3 V. (1): ambient operating temperature (TA) is from 0 to 70 ; (2): temperature under bias (TBIAS) is from -50 to 125 ; (3): storage temperature (Tstg) is from -65 to 150 ; (4): input or output voltage (VIN,VOUT) ranges from -0.6 V to 4.6 V; (5): supply voltage (VCC) is from -0.6 V to 4.6 V; (6): the typical operating current is 10 mA and is 20 mA for the maximum; (7): the maximum stand-by current for TTL is 1 mA and is 50 A for CMOS; (8): input pulse levels ranges from 0.4 V to 2.4 V; (9): input rise and fall times are both 5 ns; (10): input / output capacitance is 10 pF when VIL is 0 V.