HX6656

(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) ROM power dissipation (IDDSB + IDDOP) plus ROM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.

The 32K x 8 Radiation Hardened ROM HX6656 is a high performance 32,768 word x 8-bit read only memory with industrystandard functionality. It is fabricated with Honeywell's radiation hardened technology, and is designed for use in systems operating in radiation environments. The ROM HX6656 operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The ROM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The ROM operation is fully asynchronous, with an associated typical access time of 14 ns.

Honeywell's enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of HX6656's advanced and proprietary design, layout, and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 m (0.6 m effective gate length-Leff). Additional features include tungsten via plugs, Honeywell's proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability.