HX6408

(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to VSS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DSEC certified lab.

The 512K x 8 Radiation Hardened Static RAM HX6408 is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell's radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM HX6408 operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. Power consumption is typically <30 mW @ 1MHz in write mode, <14 mW @ 1MHz in read mode, and is less than 5 mW when in standby mode.

Honeywell's enhanced RICMOS™(Radiation Insensitive CMOS) SOI V technology is radiation hardened through the use of HX6408's advanced and proprietary design, layout and process hardening techniques.

The RICMOS™ V low power process is a SOI CMOS technology with an 80 Å gate oxide and a minimum drawn feature size of 0.35 m. HX6408's additional features include tungsten via and contact plugs, Honeywell's proprietary SHARP planarization process and a lightly doped drain (LDD) structure for improved short channel reliability. A seven transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power busing and the low collection volume SOI substrate provide improved dose rate hardening.