HX6256

(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.
(2) Voltage referenced to V_SS.
(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification.
(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DESC certified lab.

The 32K x 8 Radiation Hardened Static RAM HX6256 is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell's radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM HX6256 operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected.

The RAM HX6256 read operation is fully asynchronous, with an associated typical access time of 17 ns at 5 V.

Honeywell's enhanced SOI RICMOS™ IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The RICMOS™ IV process is a 5-volt, SOI CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 m (0.6 m effective gate length-Leff). Additional features of HX6256 include tungsten via plugs, Honeywell's proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SOI substrate provide improved dose rate hardening.