Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gain• Extreme Ruggedness• Internal Input and Output Matching• Excellent Thermal Stability• All Gold Bonding SchemeDescriptionThe high power HVV0912-150 device is an enhancement mo...
HVV0912-150: Features: • Silicon MOSFET Technology• Operation from 24V to 50V• High Power Gain• Extreme Ruggedness• Internal Input and Output Matching• Excellent Thermal Stabi...
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The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power..