HV739

Features: ·HVCMOS technology for high performance·High density integration ultrasound transmitter·Bipolar ±100V or unipolar 0 to 200V output voltage·±3A source and sink peak current·Up to 10MHz operation frequency·Matched delay times·1.8V to 5.0V CMOS logic interface·Over temperature sensing·Under...

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HV739 Picture
SeekIC No. : 004367603 Detail

HV739: Features: ·HVCMOS technology for high performance·High density integration ultrasound transmitter·Bipolar ±100V or unipolar 0 to 200V output voltage·±3A source and sink peak current·Up to 10MHz oper...

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Part Number:
HV739
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·HVCMOS technology for high performance
·High density integration ultrasound transmitter
·Bipolar ±100V or unipolar 0 to 200V output voltage
·±3A source and sink peak current
·Up to 10MHz operation frequency
·Matched delay times
·1.8V to 5.0V CMOS logic interface
·Over temperature sensing
·Under voltage protections



Application

·NDT ultrasound equipment
·Piezoelectric transducer drivers
·Sonar, ranger and fl ow metering



Pinout

  Connection Diagram


Specifications

Parameter Value
VSS, Power supply reference 0V
VLL, Positive logic supply -0.5V to +7V
VDD, Positive logic and level translator supply -0.5V to +14V
(VPP -VPF) Positive floating gate drive supply -0.5V to +14V
(VNF- VNN) Negative gate floating drive supply -0.5V to +14V
(VPP-VNN) Differential high voltage supply -0.5V to +220V
VPP, High voltage positive supply -0.5V to +220V
VNN, High voltage negative supply -220V to +0.5V
All logic input PIN, NIN and EN pin voltages -0.5V to +7V
Open drain output OPT pin voltage -0.5V to +14V
(VSUB - VPP) Substrate to VPP voltage difference +220V
(VPP TXPX) VPP to TXPX voltage difference +220V
(VSUB- TXPX) Substrate to TXPX voltage difference +220V
(TXNX-VNN ) TXNX to VNN voltage difference +220V
Storage temperature -65 to 150
Thermal resistance, JA (4-layer,1oz, 4x3in. 9-via PCB) 25/W

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.


Description

The Supertex HV739 is a single channel monolithic 200V 3.0A high-speed pulser. It is designed for NDT and medical ultrasound applications. This high voltage and high-current integrated circuit can also be used for other piezoelectric, capacitive or MEMS sensor in ultrasonic transducer and sonar ranger applications.

HV739 consists of controller logic interface circuit, voltage level translators, MOSFET gate drives and high current power P-channel and N-channel power MOSFETs as the output stage.

The output stage of HV739 is designed to provide output peak currents over 3.3A with up to 200V swing. The P- and Nchannel power FETs gate drivers are supplied by two fl oating 10 to 12VDC power supplies referenced to VPP and VNN. This direct coupling topology of the gate drivers not only saves two high voltage capacitors per channel, but also makes the PCB layout easier.




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