HUR6030PT

Features: SpecificationsDescription The HUR6030PT(High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode) is applicated as Antiparallel diode for high frequency switching devices, Antisaturation diode, Snubber diode, Free wheeling diode in converters and motor control circuits...

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SeekIC No. : 004367443 Detail

HUR6030PT: Features: SpecificationsDescription The HUR6030PT(High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode) is applicated as Antiparallel diode for high frequency switching device...

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Part Number:
HUR6030PT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:






Specifications






Description

      The HUR6030PT(High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode) is applicated as Antiparallel diode for high frequency switching devices, Antisaturation diode, Snubber diode, Free wheeling diode in converters and motor control circuits, Rectifiers in switch mode power supplies (SMPS), Inductive heating, Uninterruptible power supplies (UPS), Ultrasonic cleaners and welders. Ande it has the advantages of Avalanche voltage rated for reliable operation, Soft reverse recovery for low EMI/RFI, Low IRM reduces:Power dissipation within the diode,Turn-on loss in the commutating switch.
      The features of the HUR6030PT are International standard package, Planar passivated chips, Very short recovery time, Extremely low switching losses, Low IRM-values, Soft recovery behaviour.
      Some maximum parameters are got of he HUR6030PT. They are IFRMS/IFAVM(TC=145; rectangular, d=0.5)=70/2*30A, IFSM( TVJ=45; tp=10ms (50Hz), sine)= 300 A, EAS (TVJ=25; non-repetitive; IAS=3A; L=180uH)=1.2mJ, Ptot( TC=25)=160W, Md (mounting torque)=0.8-1.2Nm, IR(TVJ=25; VR=VRRM)/(TVJ=150; VR=VRRM)=250uA/1mA, VF (IF=30A; TVJ=150)/(TVJ=25=0.91/1.25V, RthJC=0.9K/W, RthCH=0.25K/W, trr (IF=1A; -di/dt=200A/us; VR=30V; TVJ=25) =30ns, IRM (VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 )= 7 A.






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