Features: ·Non-magnetic Package For MRI Application.·High Power, High Voltage Package (4 kV -40 kW)·Stable High Voltage Chip Passivation.·High Current Rating.·High Surge Current Rating.·Low Rs, Low Loss, Low Distortion Design.Application·MRI Applications.·High Power Antenna Switching.·Band Switchi...
HUM3002: Features: ·Non-magnetic Package For MRI Application.·High Power, High Voltage Package (4 kV -40 kW)·Stable High Voltage Chip Passivation.·High Current Rating.·High Surge Current Rating.·Low Rs, Low ...
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Parameter | Symbol | TYPE | |||
HUM3002 | HUM3003 | HUM3004 | Unit | ||
Reverse Voltage IR = 10A |
VR | 2000 | 3000 | 4000 | V |
Average Power Dissipation @ Stud =50 |
IO | 50 | 50 | 50 | W |
RF Power Handling Capability(CW) @Zo = 50 OHms Rs = 0.1 OHM @ Stud =50 |
PRF | 40 | 40 | 40 | kW |
Non-Repetitive Sinusoidal Surge Current (8.3 ms) | IFSM | 150 | 150 | 150 | A |
Storage Temperature Range Operating Temperature Range Thermal resistance Junction-to Case |
TSTG TOP RJC |
-55 to +150 -55 to +125 1.5 |
-55 to +150 -55 to +125 1.5 |
-55 to +150 -55 to +125 1.5 |
/W |
These Microsemi PIN diodes HUM3002 are perfect for high power switching applications where high isolation, low loss, low distortion characteristics, and high power handling capability are critical. These PIN diodes HUM3002 utilize Microsemi's SOGO passivation process for superior stable high voltage operation. The package is a modified DO-4 structure for ease of mount down with excellent thermal properties. No thin internal straps are used for electrical connections. A surge current of 150 amperes at half sine 8.3 ms is easily handled.