HUM2010

Features: ·High Power Stud Mount Package·High Zero Bias Impedance·Very Low Inductance and Capacitance·No Internal Lead Straps·Small Mechanical OutlineApplication• MRI Applications• High Power Antenna SwitchingSpecificationsMaximum Reverse Voltage 1000/1500/2000 VAverage Power Dissipat...

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SeekIC No. : 004367381 Detail

HUM2010: Features: ·High Power Stud Mount Package·High Zero Bias Impedance·Very Low Inductance and Capacitance·No Internal Lead Straps·Small Mechanical OutlineApplication• MRI Applications• High ...

floor Price/Ceiling Price

Part Number:
HUM2010
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Description



Features:

·High Power Stud Mount Package
·High Zero Bias Impedance
·Very Low Inductance and Capacitance
·No Internal Lead Straps
·Small Mechanical Outline



Application

• MRI Applications
• High Power Antenna Switching



Specifications

Maximum Reverse Voltage                             1000/1500/2000 V
Average Power Dissipation @ Stud = 50°C                          13 W
Non-Repetitive Sinusoidal Surge Current (8.3 ms)                100 A
Storage Temperature Range                             65°C to +175°C
Operating Temperature Range                          55°C to +150°C
Thermal Resistance                                                      7.5°C / W



Description

With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode HUM2010 is perfect for the high power switching applications where size and power handling capability are critical.

HUM2010's advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance.

Hermetically sealed, SOGO passivated PIN chips HUM2010 with full-faced metallurgical bonds on both sides to achieve high reliability and high surge capability.




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