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HUFA76639P3

MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch

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SeekIC No. : 00163646 Detail

HUFA76639P3: MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch

HUFA76639P3 Data Sheet

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Part Number:
HUFA76639P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 0.023 Ohms
Gate-Source Breakdown Voltage : +/- 16 V


Features:

• Ultra Low On-Resistance
   - rDS(ON) = 0.026, VGS = 10V
   - rDS(ON) = 0.027, VGS = 5V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

 
SYMBOL
HUFA76639P3, HUFA76639S3S
UNITS
Drain to Source Voltage (Note 1)
VDSS
100
V
Drain to Gate Voltage (RGS = 20k) (Note 1)
VDGR
100
V
Gate to Source Voltage
VGS
±16
V
Drain Current
Continuous (TC = 25, VGS = 5V)
Continuous (TC = 25, VGS = 10V) (Figure 2)
Continuous (TC = 100, VGS = 5V)
Continuous (TC = 100, VGS = 4.5V) (Figure 2) .
ID
ID
ID
ID
50
51
35
34
A
A
A
A
Pulsed Drain Current
IDM
Figure 4
Pulsed Avalanche Rating
UIS
Figures 6, 17, 18
Power Dissipation
PD
180
W
Derate Above 25
1.2
W/
Operating and Storage Temperature
TJ, TSTG
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
TL
300
Package Body for 10s, See Techbrief TB334
Tpkg
260

NOTES:
1. TJ = 25 to150 .
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Parameters:

Technical/Catalog InformationHUFA76639P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs26 mOhm @ 51A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs86nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76639P3
HUFA76639P3



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