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HUFA76429D3

MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch

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SeekIC No. : 00152503 Detail

HUFA76429D3: MOSFET 20a 60V 0.027 Ohm Logic Level N-Ch

HUFA76429D3 Data Sheet

floor Price/Ceiling Price

US $ .34~.5 / Piece | Get Latest Price
Part Number:
HUFA76429D3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~920
  • 920~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.5
  • $.38
  • $.36
  • $.34
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.0205 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0205 Ohms


Features:

• Ultra Low On-Resistance
- rDS(ON)= 0.023,VGS=10V
- rDS(ON)= 0.027,VGS=5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™=Electriecal Models
- Spice and SABER Thermal Impedance Models
- www.fairchild.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves




Specifications

Drain to Source Voltage (Note 1)............................ VDSS 60 V
Drain to Gate Voltage (RGS = 20k) (Note 1) ..................... VDGR 60 V
Gate to Source Voltage................................ VGS ±16 V
Drain Current
Continuous (TC = 25, VGS = 5V) ............................. ID20A
Continuous (TC = 25, VGS = 10V) (Figure 2)........................ID20A
Continuous (TC = 100, VGS = 5V) .............................ID20A
Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID20A
Pulsed Drain Current .................................IDM Figure 4
Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18
Power Dissipation ....................................V PD110W
Derate Above 25 ....................................0.74W/
Operating and Storage Temperature.....................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ........................TL300
Package Body for 10s, See Techbrief TB334 .......................Tpkg260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.







Parameters:

Technical/Catalog InformationHUFA76429D3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs23 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1480pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76429D3
HUFA76429D3



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