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HUFA76423D3S

MOSFET 20a 60V 0.037 Ohm Logic Level N-Ch

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SeekIC No. : 00163693 Detail

HUFA76423D3S: MOSFET 20a 60V 0.037 Ohm Logic Level N-Ch

HUFA76423D3S Data Sheet

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Part Number:
HUFA76423D3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.027 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

• Ultra Low On-Resistance
  - r DS(ON) = 0.032, VGS = 10V
  - r DS(ON) = 0.037, VGS = 5V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves Ordering


Specifications

Drain to Source Voltage (Note 1)............................ VDSS 60 V
Drain to Gate Voltage (RGS = 20k) (Note 1)  ..................... VDGR 60 V
Gate to Source Voltage  ................................ VGS ±16 V
Drain Current
Continuous (TC = 25, VGS = 5V)   ............................. ID20A
Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID20A
Continuous (TC = 100, VGS = 5V)  .............................ID20A
Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID20A
Pulsed Drain Current  .................................IDM Figure 4
Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18
Power Dissipation.....................................V PD85W
Derate Above 25   ...................................0.567W/
Operating and Storage Temperature.....................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ........................TL300
Package Body for 10s, See Techbrief TB334  .......................Tpkg260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Parameters:

Technical/Catalog InformationHUFA76423D3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs32 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1060pF @ 25V
Power - Max85W
PackagingTube
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76423D3S
HUFA76423D3S



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