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HUFA76419P3

MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch

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SeekIC No. : 00160100 Detail

HUFA76419P3: MOSFET 20a 60V 0.043 Ohm Logic Level N-Ch

HUFA76419P3 Data Sheet

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Part Number:
HUFA76419P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.029 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.029 Ohms


Features:

• Ultra Low On-Resistance
  - r DS(ON) = 0.035, VGS = 10V
  - r DS(ON) = 0.040, VGS = 5V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

Drain to Source Voltage (Note 1)............................ VDSS 60 V
Drain to Gate Voltage (RGS = 20k) (Note 1)  ..................... VDGR 60 V
Gate to Source Voltage  ................................ VGS ±16 V
Drain Current
Continuous (TC = 25, VGS = 5V)   ............................. ID27A
Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID29A
Continuous (TC = 100, VGS = 5V)  .............................ID19A
Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID18A
Pulsed Drain Current  .................................IDM Figure 4
Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18
Power Dissipation.....................................V PD75W
Derate Above 25 .....................................0.5W/
Operating and Storage Temperature.....................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ........................TL300
Package Body for 10s, See Techbrief TB334  .......................Tpkg260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Parameters:

Technical/Catalog InformationHUFA76419P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs35 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 25V
Power - Max75W
PackagingTube
Gate Charge (Qg) @ Vgs28nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76419P3
HUFA76419P3



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