Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Packaging
: Reel
Maximum Operating Temperature
: + 150 C
Continuous Drain Current
: 4.8 A
Configuration
: Dual Dual Drain
Package / Case
: SOIC-8 Narrow
Drain-Source Breakdown Voltage
: 60 V
Gate-Source Breakdown Voltage
: +/- 16 V
Resistance Drain-Source RDS (on)
: 0.056 Ohms
Features: • 150°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance r DS(ON) = 0.049, VGS = 10V
• Ultra-Low On-Resistance r DS(ON) = 0.056, VGS = 5VApplication• Motor and Load Control
• Powertrain ManagementSpecifications
|
Symbol |
Parameter |
Ratings |
Units |
|
VDSS |
Drain to Source Voltage |
60 |
V |
|
VGS |
Gate to Source Voltage |
±16 |
V |
|
ID
|
Drain Current
Continuous (TC = 25, VGS = 10V) |
5.1 |
A |
| Continuous (TC = 25, VGS = 5V) |
4.8 |
A |
| Continuous (TC = 125, VGS = 5V, RJA = 228/W) |
1 |
A |
| Pulsed |
Figure 4 |
A |
|
EAS |
Single Pulse Avalanche Energy (Note 1) |
260 |
mJ |
|
PD
|
Power dissipation |
2.5 |
W |
| Derate above 25 |
0.02 |
W/ |
|
TJ, TSTG |
Operating and Storage Temperature |
-55 to 150 |
|
DescriptionThese N-Channel power MOSFETs HUFA76413DK8T are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA76413DK8T was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Parameters: | Technical/Catalog Information | HUFA76413DK8T |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 5.1A |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 5.1A, 10V |
| Input Capacitance (Ciss) @ Vds | 620pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | HUFA76413DK8T
HUFA76413DK8T
HUFA76413DK8TDKR ND
HUFA76413DK8TDKRND
HUFA76413DK8TDKR
|
HUFA76413DK8T Data Sheet
