HUFA76413D3

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.041 Ohms
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-251


Features:

• Ultra Low On-Resistance
  - r _DS(ON) = 0.049, V_GS = 10V
  - r _DS(ON) = 0.056, V_GS = 5V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R_GS Curves


Specifications

Drain to Source Voltage (Note 1)  .......................... V_DSS 60 V
Drain to Gate Voltage (R_GS = 20k) (Note 1) .................... V_DGR 60 V
Gate to Source Voltage ............................... V_GS ±16 V
Drain Current
Continuous(T_C= 25, V_GS= 5V) .............................I_D20 A
Continuous (T_A = 25, V_GS = 10V) (Note 2)....................... I_D20A
Continuous (T_C= 100, V_GS= 5V)  ............................I_D15A
Continuous (T_A = 100, V_GS = 4.5V) (Figure 2) ..................... I_D15A
Pulsed Drain Current................................I_DM Figure 4
Pulsed Avalanche Rating...........................ULS Figure6,17,18
Power Dissipation ....................................P_D60W
Derate Above 25...................................0.4 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L 300
Package Body for 10s, See Techbrief 334   ......................T_pkg 260
NOTE:
1. T_J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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Parameters:

Technical/Catalog Information	HUFA76413D3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	49 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	645pF @ 25V
Power - Max	60W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76413D3 HUFA76413D3