HUFA76404DK8T

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.11 Ohms
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.6 A
Drain-Source Breakdown Voltage : 62 V


Features:

` r<sub>DS(ON)</sub> = 110m (Typ.), V<sub>GS</sub> = 5V, I<sub>D</sub> = 3.2A
` Q_g(tot) = 3.8nC (Typ.), V_GS = 5V
` Low Miller Charge
` Low Q_RR Body Diode
` Optimized efficiency at high frequencies
` UIS Capability (Single Pulse and Repetitive Pulse)
` Internal R<sub>G</sub> = 100
` Qualified to AEC Q101


Application

· Motor / Body Load Control
· ABS Systems
· Powertrain Management
· Injection Systems
· DC-DC converters and Off-line UPS
· Distributed Power Architectures and VRMs
· Primary Switch for 12V and 24V systems


Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain to Source Voltage	62	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current Continuous (TA = 25, VGS = 10V, RJA = 50/W)	3.6	A
	Continuous (TA = 25, VGS = 5V, RJA = 50/W)	3.2	A
	Pulsed	Figure 4	A
EAS	Single Pulse Avalanche Energy (Note 1)	128	mJ
PD	Power dissipation	2.5	W
	Derate above 25	20	mW/
TJ, TSTG	Operating and Storage Temperature	-55 to 150

Parameters:

Technical/Catalog Information	HUFA76404DK8T
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	62V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	110 mOhm @ 3.6A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	4.9nC @ 5V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA76404DK8T HUFA76404DK8T