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HUFA75842P3

MOSFET 43a 150V 0.042 Ohm N-Ch MOSFET

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SeekIC No. : 00159899 Detail

HUFA75842P3: MOSFET 43a 150V 0.042 Ohm N-Ch MOSFET

HUFA75842P3 Data Sheet

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Part Number:
HUFA75842P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 43 A
Resistance Drain-Source RDS (on) : 0.042 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.042 Ohms
Continuous Drain Current : 43 A


Features:

• Ultra Low On-Resistance
   - rDS(ON) = 0.042, VGS = 10V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

                                                                                            HUFA75842P3   UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . VDSS               150            V
Drain to Gate Voltage (RGS = 20k) (Note 1) .. . .   VDGR               150            V
Gate to Source Voltage . . . .  . . . . . . . . . . . . ..  . . . . VGS                ±20           V
Drain Current
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . ID                43             A
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . ID                30             A
Pulsed Drain Current . . . . . . . . . . . . . .. . . . . . . . . . . IDM              Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . UIS      Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . .   . . . . . . PD                 230           W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.53         W/
Operating and Storage Temperature . . . . . . . . . TJ, TSTG           -55 to 175        
Maximum Temperature for Solderin
Leads at 0.063in (1.6mm) from Case for 10s. . . . . .. . TL                   300            
Package Body for 10s, See Techbrief TB334. . . . . . . Tpkg                  260              

NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


Parameters:

Technical/Catalog InformationHUFA75842P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C43A
Rds On (Max) @ Id, Vgs42 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds 2730pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs175nC @ 20V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75842P3
HUFA75842P3



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