HUFA75829D3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.11 Ohms
Package / Case : TO-251


Features:

• Ultra Low On-Resistance
  - r_DS(ON) = 0.110, V_GS = 10V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) .......................... V_DSS 150 V
Drain to Gate Voltage (R_GS = 20k) (Note 1).................... V_DGR 150 V
Gate to Source Voltage  ............................... V_GS ±20 V
Drain Current
Continuous(T_C= 25, V_GS= 10V)(Figure 2) ........................I_D18 A
Continuous (T_C= 100, V_GS= 10V) (Figure 2).......................I_D13 A
Pulsed Drain Current   ................................I_DM Figure 4
Pulsed Avalanche Rating   ...........................ULS Figure6,14,15
Power Dissipation  ....................................P_D110W
Derate Above 25 ...................................0.73 W/
Operating and Storage Temperature ....................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L 300
Package Body for 10s, See Techbrief 334   ......................T_pkg 260
NOTE:
1. T_J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
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