HUFA75652G3

MOSFET 75a 100V 0.008 Ohm N-Ch MOSFET

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SeekIC No. : 00159742 Detail

HUFA75652G3: MOSFET 75a 100V 0.008 Ohm N-Ch MOSFET

floor Price/Ceiling Price

Part Number:
HUFA75652G3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-247
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.008 Ohms


Features:

• Ultra Low On-Resistance
  - rDS(ON) = 0.008, VGS = 10V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve



Specifications

Drain to Source Voltage (Note 1)  .......................... VDSS 100 V
Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 100 V
Gate to Source Voltage   ............................... VGS ±20 V
Drain Current
Continuous(TC= 25oC, VGS= 10V)(Figure 2)   .......................ID75 A
Continuous (TC= 100oC, VGS= 10V) (Figure 2)  ......................ID75 A
Pulsed Drain Current  ................................IDM Figure 4
Pulsed Avalanche Rating   ..............................ULS Figure6
Power Dissipation   ...................................PD515W
Derate Above 25  ..................................3.44 W/
Operating and Storage Temperature  ...................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................TL 300
Package Body for 10s, See Techbrief 334   ......................Tpkg 260
NOTE:
1. TJ = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.



Parameters:

Technical/Catalog InformationHUFA75652G3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs8 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 7585pF @ 25V
Power - Max515W
PackagingTube
Gate Charge (Qg) @ Vgs475nC @ 20V
Package / CaseTO-247
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75652G3
HUFA75652G3



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