Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-247
Continuous Drain Current
: 75 A
Resistance Drain-Source RDS (on)
: 0.008 Ohms
Features: • Ultra Low On-Resistance
- rDS(ON) = 0.008, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating CurveSpecificationsDrain to Source Voltage (Note 1) .......................... V
DSS 100 V
Drain to Gate Voltage (R
GS = 20k) (Note 1) .................... V
DGR 100 V
Gate to Source Voltage ............................... V
GS ±20 V
Drain Current
Continuous(T
C= 25oC, V
GS= 10V)(Figure 2) .......................I
D75 A
Continuous (T
C= 100oC, V
GS= 10V) (Figure 2) ......................I
D75 A
Pulsed Drain Current ................................I
DM Figure 4
Pulsed Avalanche Rating ..............................ULS Figure6
Power Dissipation ...................................PD515W
Derate Above 25 ..................................3.44 W/
Operating and Storage Temperature ...................T
J, T
STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T
L 300
Package Body for 10s, See Techbrief 334 ......................T
pkg 260
NOTE:
1. T
J = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.
Parameters: Technical/Catalog Information | HUFA75652G3 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 75A |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 75A, 10V |
Input Capacitance (Ciss) @ Vds | 7585pF @ 25V |
Power - Max | 515W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 475nC @ 20V |
Package / Case | TO-247 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUFA75652G3 HUFA75652G3 |