HUFA75639G3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.025 Ohms
Package / Case : TO-247
Continuous Drain Current : 56 A


Features:

• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™ Electrical Models
  - Spice and Saber Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) .......................... V_DSS 100 V
Drain to Gate Voltage (R_GS = 20k) (Note 1).................... V_DGR 100 V
Gate to Source Voltage ............................... V_GS ±20 V
Drain Current
Continuous(Figure 2)   ..................................I_D56 A

Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating ...........................E_AS Figure6,14,15
Power Dissipation  ...................................P_D200W
Derate Above 25 ..................................1.35 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s   .....................T_L 300
Package Body for 10s, See Techbrief 334 ........ ..............T_pkg 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150



Description

These N-Channel power MOSFETs HUFA75639G3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75639G3 was designed for use in applications where power efficiency is important, such as witching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75639.

Parameters:

Technical/Catalog Information	HUFA75639G3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	56A
Rds On (Max) @ Id, Vgs	25 mOhm @ 56A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 20V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75639G3 HUFA75639G3