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HUFA75637P3

MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET

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SeekIC No. : 00163836 Detail

HUFA75637P3: MOSFET 44a 100V 0.030 Ohm N-Ch MOSFET

HUFA75637P3 Data Sheet

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Part Number:
HUFA75637P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
  • 15 Days
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 44 A
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

• Ultra Low On-Resistance
  - rDS(ON) = 0.030, VGS = 10V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) .......................... VDSS 100 V
Drain to Gate Voltage (RGS = 20k) (Note 1).................... VDGR 100 V
Gate to Source Voltage  ............................... VGS ±20 V
Drain Current
Continuous (TA = 25, VGS = 10V)(Figure 2)   ......................ID44 A
Continuous (TA = 100, VGS = 10V) (Figure 2) ......................ID31A
Pulsed Drain Current ................................IDM Figure 4
Pulsed Avalanche Rating ...........................ULS Figure6,14,15
Power Dissipation  ...................................PD155W
Derate Above 25 ..................................1.03 W/
Operating and Storage Temperature ...................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s   .....................TL 300
Package Body for 10s, See Techbrief 334 ........ ..............Tpkg 260
NOTE:
1. TJ = 25 to 150
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
.



Parameters:

Technical/Catalog InformationHUFA75637P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs30 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 25V
Power - Max155W
PackagingTube
Gate Charge (Qg) @ Vgs108nC @ 20V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75637P3
HUFA75637P3



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