HUFA75631SK8

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 5.5 A
Resistance Drain-Source RDS (on) : 0.039 Ohms
Package / Case : SOP-8


Features:

• Ultra Low On-Resistance
  - r_DS(ON) = 0.039, V_GS = 10V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) .......................... V_DSS 100 V
Drain to Gate Voltage (R_GS = 20k) (Note 1).................... V_DGR 100 V
Gate to Source Voltage ............................... V_GS ±20 V
Drain Current
Continuous (T_A = 25oC, V_GS = 10V)(Figure 2) ......................I_D5.5 A
Continuous (T_A = 100oC, V_GS = 10V) (Figure 2) ..................... ID3.5A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating ...........................ULS Figure6,14,15
Power Dissipation ....................................P_D2.5W
Derate Above 25....................................20 W/
Operating and Storage Temperature....................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s   ......................T_L 300
Package Body for 10s, See Techbrief 334  .......................T_pkg 260
NOTE:
1. T_J = 25 to 150
2. 50/W measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 10 second.
3. 152/W measured using FR-4 board with 0.054 in² (34.8 mm²) copper pad at 1000 seconds
4. 189/W measured using FR-4 board with 0.0115 in² (7.42 mm²) copper pad at 1000 seconds
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

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