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HUFA75631P3

MOSFET 33a 100V N-Ch UltraFET

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SeekIC No. : 00162658 Detail

HUFA75631P3: MOSFET 33a 100V N-Ch UltraFET

HUFA75631P3 Data Sheet

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Part Number:
HUFA75631P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

• Ultra Low On-Resistance
   - rDS(ON) = 0.040, VGS = 10V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™Electrical Models
   - Spice and SABER Thermal Impedance Models
   - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

                                                                                           HUFA75631P3
                                                                                         HUFA75631S3ST         UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . .  VDSS          100                      V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . VDGR          100                      V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . .  VGS           ±20                     V
Drain Current
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . ID            33                      A
Continuous (TC = 100, VGS = 10V) (Figure 2) . . . . . . .ID           23                      A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15
Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . ..  PD         120                    W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .        0.80                  W/
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG   - 55 to 175              
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . .TL         300                   
Package Body for 10s, See Techbrief TB334. . . . . . . . . . Tpkg        260                    

NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


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