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HUFA75623S3ST

MOSFET 22a 100V N-Ch UltraFET

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SeekIC No. : 00161426 Detail

HUFA75623S3ST: MOSFET 22a 100V N-Ch UltraFET

HUFA75623S3ST Data Sheet

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Part Number:
HUFA75623S3ST
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
  • 15 Days
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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.064 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.064 Ohms
Package / Case : TO-263AB


Features:

• Ultra Low On-Resistance
  - rDS(ON) = 0.064, VGS = 10V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

Drain to Source Voltage (Note 1) ........................... VDSS 100 V
Drain to Gate Voltage (RGS = 20k) (Note 1)  .................... VDGR 100 V
Gate to Source Voltage ................................ VGS ±20 V
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Figure 2).......................ID22 A
Continuous (TC = 100oC, VGS = 10V) (Figure 2) .....................IDM 15 A
Pulsed Drain Current .............................IDM Figure 4 6,14,15
Pulsed Avalanche Rating  ............................ULS Figure6,14,15
Power Dissipation   .....................................PD85W
Derate Above 25   ...................................0.57 W/
Operating and Storage Temperature   ....................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ........................TL 300
Package Body for 10s, See Techbrief 334.........................Tpkg 260
NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Parameters:

Technical/Catalog InformationHUFA75623S3ST
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs64 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 790pF @ 25V
Power - Max85W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs52nC @ 20V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75623S3ST
HUFA75623S3ST



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