HUFA75617D3S

MOSFET 16a 100V N-Ch 0.090Ohm

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HUFA75617D3S: MOSFET 16a 100V N-Ch 0.090Ohm

floor Price/Ceiling Price

Part Number:
HUFA75617D3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Continuous Drain Current : 16 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 0.09 Ohms


Features:

• Ultra Low On-Resistance
  - rDS(ON) = 0.090, VGS = 10V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve



Specifications

Drain to Source Voltage (Note 1)  .......................... VDSS 100 V
Drain to Gate Voltage (RGS = 20k) (Note 1) .................... VDGR 100 V
Gate to Source Voltage   ............................... VGS ±20 V
Drain Current
Continuous (TC = 25, VGS = 10V) (Figure 2).......................ID16 A
Continuous (TC = 100, VGS = 10V) (Figure 2) .....................IDM 11 A
Pulsed Drain Current.............................IDM Figure 4 6,14,15
Pulsed Avalanche Rating ............................ULS Figure6,14,15
Power Dissipation  .....................................PD64W
Derate Above 25 ...................................0.43 W/
Operating and Storage Temperature ....................TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s .......................TL 300
Package Body for 10s, See Techbrief 334........................Tpkg 260
NOTE:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Parameters:

Technical/Catalog InformationHUFA75617D3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs90 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 570pF @ 25V
Power - Max64W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 20V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA75617D3S
HUFA75617D3S



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