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HUFA75433S3S

Features: • 175°C Maximum Junction Temperature• UIS Capability (Single Pulse and Repetitive Pulse)• Ultra-Low On-Resistance rDS(ON) = 0.016, VGS = 10VApplication• Motor and Load Control• Powertrain ManagementPinoutSpecifications Symbol Parameter Ratings ...

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SeekIC No. : 004367365 Detail

HUFA75433S3S: Features: • 175°C Maximum Junction Temperature• UIS Capability (Single Pulse and Repetitive Pulse)• Ultra-Low On-Resistance rDS(ON) = 0.016, VGS = 10VApplication• Motor and L...

HUFA75433S3S Data Sheet

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Part Number:
HUFA75433S3S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 175°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.016, VGS = 10V


Application

• Motor and Load Control
• Powertrain Management


Pinout

Connection Diagram


Specifications

Symbol
 Parameter
Ratings
Units
VDSS
 Drain to Source Voltage
60
V
VGS
 Gate to Source Voltage
±20
V
ID
 Drain Current
Continuous (TC = 25, VGS = 10V)
64
A
Continuous (TC = 125oC, VGS = 10V, RJA = 43/W)
5
A
Single Pulse Avalanche Energy (Note 1)
Figure 4
A
EAS
 Pulsed
250
mJ
PD
 Power dissipation
150
W
Derate above 25
1
W/
TJ, TSTG
 Operating and Storage Temperature
-55 to 175



Description

These N-Channel power MOSFETs HUFA75433S3S are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-esistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75433S3S was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.




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