HUFA75429D3S Selling Leads, Price trend, HUFA75429D3S DataSheet download, circuit diagram from SeekIC.com

Features: • 175°C Maximum Junction Temperature• UIS Capability (Single Pulse and Repetitive Pulse)• Ultra-Low On-Resistance rDS(ON) = 0.025, VGS = 10VApplication• Motor & Load Control• Powertrain ManagementPinoutSpecifications Symbol Parameter Ratings ...

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SeekIC No. : 004367364 Detail

HUFA75429D3S: Features: • 175°C Maximum Junction Temperature• UIS Capability (Single Pulse and Repetitive Pulse)• Ultra-Low On-Resistance rDS(ON) = 0.025, VGS = 10VApplication• Motor &...

HUFA75429D3S Data Sheet

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Part Number:: HUFA75429D3S
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

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15 Days

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Upload time: 2024/5/31

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What is this?

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Product Details

Description

Features:

• 175°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance r_DS(ON) = 0.025, V_GS = 10V

Application

• Motor & Load Control
• Powertrain Management

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Ratings	Units
V_DSS	Drain to Source Voltage	60	V
V_GS	Gate to Source Voltage	±20	V
I_D	Drain Current Continuous (T_C = 25, V_GS = 10V)	20	A
	Continuous (T_C = 125, V_GS = 10V, R_JA = 43/W)	4	A
	Single Pulse Avalanche Energy (Note 1)	Figure 4	A
E_AS	Pulsed	312	mJ
P_D	Power dissipation	125	W
P_D	Derate above 25	0.83	W/
T_J, T_STG	Operating and Storage Temperature	-55 to 175

Description

These N-Channel power MOSFETs HUFA75429D3S are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on- esistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75429D3S was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches.

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