HUFA75429D3S

Features: • 175°C Maximum Junction Temperature• UIS Capability (Single Pulse and Repetitive Pulse)• Ultra-Low On-Resistance rDS(ON) = 0.025, VGS = 10VApplication• Motor & Load Control• Powertrain ManagementPinoutSpecifications Symbol Parameter Ratings ...

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SeekIC No. : 004367364 Detail

HUFA75429D3S: Features: • 175°C Maximum Junction Temperature• UIS Capability (Single Pulse and Repetitive Pulse)• Ultra-Low On-Resistance rDS(ON) = 0.025, VGS = 10VApplication• Motor &...

floor Price/Ceiling Price

Part Number:
HUFA75429D3S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 175°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.025, VGS = 10V



Application

• Motor & Load Control
• Powertrain Management



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
Continuous (TC = 25, VGS = 10V)
20
A
Continuous (TC = 125, VGS = 10V, RJA = 43/W)
4
A
Single Pulse Avalanche Energy (Note 1)
Figure 4
A
EAS
Pulsed
312
mJ
PD
Power dissipation
125
W
Derate above 25
0.83
W/
TJ, TSTG
Operating and Storage Temperature
-55 to 175



Description

These N-Channel power MOSFETs HUFA75429D3S are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on- esistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75429D3S was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches.




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