HUFA75339S3S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

• 75A, 55V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Models
  - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
 - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1)  .......................... V_DSS 55 V
Drain to Gate Voltage (R_GS = 20k) (Note 1) .................... V_DGR 55 V
Gate to Source Voltage............................... V_GS ±20 V
Drain Current
Continuous (Figure 2)   .................................I_D 75 A
Pulsed Drain Current   ...............................I_DM Figure 4
Pulsed Avalanche Rating ..........................E_AS Figure6, 14, 15
Power Dissipation  ...................................P_D200W
Derate Above 25   .................................1.35 W/
Operating and Storage Temperature   ..................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s   .....................T_L 300
Package Body for 10s, See Techbrief 334  ......................T_pkg 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150
.



Description

These N-Channel power MOSFETs HUFA75339S3S are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.HUFA75339S3S was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75339

Parameters:

Technical/Catalog Information	HUFA75339S3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	12 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	130nC @ 20V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75339S3S HUFA75339S3S