HUFA75337G3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 75 A


Features:

• 75A, 55V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Models
  - SPICE and SABER Thermal Impedance Models Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1)  .......................... V_DSS 55 V
Drain to Gate Voltage (RGS = 20k) (Note 1) .................... V_DGR 55 V
Gate to Source Voltage ............................... V_GS ±20 V
Drain Current
Continuous (Figure 2)...................................I_D75 A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating  ..............................EAS Figures
Power Dissipation ....................................P_D 93W
Derate Above 25 ..................................1.17 W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L 300
Package Body for 10s, See Techbrief 334.......................T_pkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150.



Description

These N-Channel power MOSFETs HUFA75337G3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75337G3 was designed for use in applications where power efficiency is important, such as switching  egulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75337.

Parameters:

Technical/Catalog Information	HUFA75337G3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	14 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	1775pF @ 25V
Power - Max	175W
Packaging	Tube
Gate Charge (Qg) @ Vgs	109nC @ 20V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75337G3 HUFA75337G3