HUFA75332P3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.019 Ohms


Features:

• 60A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
   Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

                                                                                                                             UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . VDSS          55                 V
Drain to Gate Voltage (R_GS = 20k) (Note 1) . . . . . . . . . .V_DGR          55                  V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS          ±20               V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D            60
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM        Figure 4           A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS         Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .       145               W
                                                                                                              0.97           W/

Operating and Storage Temperature . . . . . . . . . . . . . . .T_J, T_STG     -55 to 175       
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . .T_L          300              
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . .T_pkg         260            

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25v to 150.


Description

These N-Channel power MOSFETs HUFA75332P3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area,resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75332P3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75332.