HUFA75332G3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-247
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.019 Ohms


Features:

• 60A, 55V
• Simulation Models
   - Temperature Compensated PSPICE® and SABER™ Models
   - SPICE and SABER Thermal Impedance Models
   Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

                                                                                                                             UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . VDSS          55                 V
Drain to Gate Voltage (R_GS = 20k) (Note 1) . . . . . . . . . .V_DGR          55                  V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS          ±20               V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D            60
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM        Figure 4           A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS         Figure 6
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .       145               W
                                                                                                              0.97           W/

Operating and Storage Temperature . . . . . . . . . . . . . . .T_J, T_STG     -55 to 175       
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . .T_L          300              
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . .T_pkg         260            

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25v to 150.


Description

These N-Channel power MOSFETs HUFA75332G3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area,resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75332G3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75332.

Parameters:

Technical/Catalog Information	HUFA75332G3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	19 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	145W
Packaging	Tube
Gate Charge (Qg) @ Vgs	85nC @ 20V
Package / Case	TO-247
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75332G3 HUFA75332G3