HUFA75321P3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.034 Ohms


Features:

• 35A, 55V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™ Models
  - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) ........................... V_DSS 55 V
Drain to Gate Voltage (RGS = 20k) (Note 1)   .................... V_DGR 55 V
Gate to Source Voltage   ............................... V_GS ±20 V
Drain Current
Continuous (Figure 2)...................................I_D35 A
Pulsed Drain Current ................................I_DM Figure 4
Pulsed Avalanche Rating  .........................EAS Figures 6, 14, 15
Power Dissipation ....................................P_D 93W
Derate Above 25..................................0.625W/
Operating and Storage Temperature ...................T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s ......................T_L 300
Package Body for 10s, See Techbrief 334.......................T_pkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150.



Description

These N-Channel power MOSFETs HUFA75321P3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75321P3 was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75321.

Parameters:

Technical/Catalog Information	HUFA75321P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	34 mOhm @ 35A, 10V
Input Capacitance (Ciss) @ Vds	680pF @ 25V
Power - Max	93W
Packaging	Tube
Gate Charge (Qg) @ Vgs	44nC @ 20V
Package / Case	TO-220AB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75321P3 HUFA75321P3