HUFA75321D3

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.036 Ohms
Package / Case : TO-251


Features:

• 20A, 55V
• Simulation Models
  - Temperature Compensating PSPICE® and SABER™ Models
  - Thermal Impedance SPICE and SABER Models Available on the web at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) ................................ V_DSS 55 V
Drain to Gate Voltage (RGS = 20k) (Note 1)  ......................... V_DGR 55 V
Gate to Source Voltage   ....................................V_GS ±20 V
Drain Current
Continuous (Figure 2)........................................ I_D 20 A
Pulsed Drain Current ..................................... I_D MFigure 4
Pulsed Avalanche Rating............................... EAS Figures 6, 14, 15
Power Dissipation  .........................................P_D 93 W
Derate Above 25........................................0.625 W/
Operating and Storage Temperature   ........................ T_J, T_STG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.   ...........................T_L 300
Package Body for 10s, See Techbrief 334  ............................ T_pkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 150





Description

These N-Channel power MOSFETs HUFA75321D3 are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.HUFA75321D3 was designed for use in applications where power efficiency is important, such as switching egulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Formerly developmental type TA75321.

Parameters:

Technical/Catalog Information	HUFA75321D3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	36 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	680pF @ 25V
Power - Max	93W
Packaging	Tube
Gate Charge (Qg) @ Vgs	44nC @ 20V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75321D3 HUFA75321D3