HUFA75309T3ST

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Package / Case : SOT-223
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

• 3A, 55V
• Ultra Low On-Resistance, rDS(ON) = 0.070
• Diode Exhibits Both High Speed and Soft Recovery
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Voltage (Note 1) ............................ V_DSS 55 V
Drain to Gate Voltage (RGS = 20k) (Note 1) ..................... V_DGR 55 V
Gate to Source Voltage................................ V_GS ±20V V
Drain Current
Continuous (Note 2) (Figure 2)................................ I_D 3 A
Pulsed Drain Current .................................I_DM Figure 5
Pulsed Avalanche Rating...........................EAS Figures 6, 14, 15
Power Dissipation (Note 2) ................................ P_D 1.1W
Derate Above 25 ...................................9.09 mW/
Operating and Storage Temperature..................... T_J, T_STG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s........................T_L 300
Package Body for 10s, See Techbrief 334 ........................T_pkg260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25 to 125.




Description

This N-Channel power MOSFET HUFA75309T3ST is manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in utstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. HUFA75309T3ST was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery operated products.

Formerly developmental type TA75309.

Parameters:

Technical/Catalog Information	HUFA75309T3ST
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	352pF @ 25V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	23nC @ 20V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUFA75309T3ST HUFA75309T3ST