HUF76645P3

MOSFET 75a 100V 0.015 Ohm Logic Level N-Ch

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SeekIC No. : 00160275 Detail

HUF76645P3: MOSFET 75a 100V 0.015 Ohm Logic Level N-Ch

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Part Number:
HUF76645P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.012 Ohms


Features:

• Ultra Low On-Resistance
        - rDS(ON) = 0.014Ω, VGS = 10V
        - rDS(ON) = 0.015Ω, VGS = 5V
• Simulation Models
        - Temperature Compensated PSPICE® and SABER™ Electrical Models
        - Spice and SABER Thermal Impedance Models
        - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves



Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID 75 A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 75 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID 63 A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID 62 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 17, 18  
Power Dissipation . . . . . . .. . . . . . PD
310 W
Derate Above . . . . . . . . . . . . .25 2.07 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF76645P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs14 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs153nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF76645P3
HUF76645P3



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