MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch
HUF76639S3S: MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 51 A | ||
Resistance Drain-Source RDS (on) : | 0.023 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263AB | Packaging : | Tube |
• Ultra Low On-Resistance
-rDS(ON) = 0.026Ω, VGS = 10V
-rDS(ON) = 0.027Ω, VGS = 5V
• Simulation Models
-Temperature Compensated PSPICE® and SABER Electrical Models
-Spice and SABER© Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS | 100 | V |
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR | 100 | V |
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS | ±16 | V |
Drain Current | ||
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID | 50 | A |
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID | 51 | A |
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID | 35 | A |
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID | 34 | A |
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM | Figure 4 | |
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS | Figures 6, 17, 18 | |
Power Dissipation . . . . . . .. . . . . . PD |
180 | W |
Derate Above . . . . . . . . . . . . .25 | 1.2 | W/ |
Operating and Storage Temperature . . . . . TJ, TSTG | -55 to 175 | |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL | 300 | |
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg | 260 |
Technical/Catalog Information | HUF76639S3S |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 50A |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 51A, 10V |
Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
Power - Max | 180W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 86nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUF76639S3S HUF76639S3S |