HUF76639S3S

MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch

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HUF76639S3S: MOSFET 50a 100V 0.027 Ohm Logic Level N-Ch

floor Price/Ceiling Price

Part Number:
HUF76639S3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 51 A
Resistance Drain-Source RDS (on) : 0.023 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.023 Ohms
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 51 A
Package / Case : TO-263AB


Features:

• Ultra Low On-Resistance
           -
rDS(ON) = 0.026Ω, VGS = 10V
           -rDS(ON) = 0.027Ω, VGS = 5V
• Simulation Models
           -Temperature Compensated PSPICE® and SABER Electrical Models
           -Spice and SABER© Thermal Impedance Models
           - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves




Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID 50 A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 51 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID 35 A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID 34 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 17, 18  
Power Dissipation . . . . . . .. . . . . . PD
180 W
Derate Above . . . . . . . . . . . . .25 1.2 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF76639S3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs26 mOhm @ 51A, 10V
Input Capacitance (Ciss) @ Vds 2400pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs86nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF76639S3S
HUF76639S3S



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