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HUF76633P3: MOSFET 38a 100V 0.036 Ohm Logic Level N-Ch

HUF76633P3 Data Sheet

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Part Number:: HUF76633P3
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/31

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 16 V	Continuous Drain Current :	38 A
Resistance Drain-Source RDS (on) :	0.029 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 38 A
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.029 Ohms

Features:

• Ultra Low On-Resistance
           - rDS(ON) = 0.035Ω, VGS = 10V
           - rDS(ON) = 0.036Ω, VGS = 5V
• Simulation Models
           - Temperature Compensated PSPICE® and SABER™ Electrical Models
           - Spice and SABER Thermal Impedance Models
           - www.Fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . V_DSS	100	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . V_DGR	100	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . V_GS	±16	V
Drain Current
Continuous (TC = 25, VGS = 5V). . . . .. . . . . I_D	38	A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . I_D	39	A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . I_D	27	A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . I_D	27	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . I_DM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . U_IS	Figures 6, 17, 18
Power Dissipation . . . . . . .. . . . . . PD	145	W
Derate Above . . . . . . . . . . . . .25	0.97	W/
Operating and Storage Temperature . . . . . T_J, T_STG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . T_L	300
Package Body for 10s, See Techbrief TB334. . . . . . . . T_pkg	260

Parameters:

Technical/Catalog Information	HUF76633P3
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	38A
Rds On (Max) @ Id, Vgs	35 mOhm @ 39A, 10V
Input Capacitance (Ciss) @ Vds	1820pF @ 25V
Power - Max	145W
Packaging	Tube
Gate Charge (Qg) @ Vgs	67nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF76633P3 HUF76633P3

HUF76633P3

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