HUF76629D3S

MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch

product image

HUF76629D3S Picture
SeekIC No. : 00161660 Detail

HUF76629D3S: MOSFET 20a 100V 0.054 Ohm Logic Level N-Ch

floor Price/Ceiling Price

Part Number:
HUF76629D3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.0415 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Continuous Drain Current : 20 A
Gate-Source Breakdown Voltage : +/- 16 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 0.0415 Ohms


Features:

• Ultra Low On-Resistance
        - rDS(ON) = 0.052Ω, VGS = 10V
        - rDS(ON) = 0.054Ω, VGS = 5V
• Simulation Models
        - Temperature Compensated PSPICE® and SABER© Electriecal Models
        - Spice and SABER Thermal Impedance Models
        - www.semi.harris.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves



Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID 20 A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 20 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID 20 A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID 20 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 17, 18  
Power Dissipation . . . . . . .. . . . . . PD
110 W
Derate Above . . . . . . . . . . . . .25 0.74 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF76629D3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs52 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1285pF @ 25V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF76629D3S
HUF76629D3S



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Cable Assemblies
Tapes, Adhesives
803
Transformers
View more