MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
HUF76609D3ST: MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 0.13 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA | Packaging : | Reel |
Technical/Catalog Information | HUF76609D3ST |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 425pF @ 25V |
Power - Max | 49W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 16nC @ 10V |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HUF76609D3ST HUF76609D3ST |