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HUF76609D3

MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate

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SeekIC No. : 00151591 Detail

HUF76609D3: MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate

HUF76609D3 Data Sheet

floor Price/Ceiling Price

US $ .42~.74 / Piece | Get Latest Price
Part Number:
HUF76609D3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.74
  • $.62
  • $.5
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.13 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 10 A
Package / Case : IPAK
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.13 Ohms


Features:

• Ultra Low On-Resistance
         - rDS(ON) = 0.160Ω, VGS = 10V
         - rDS(ON) = 0.165Ω, VGS = 5V
• Simulation Models
         - Temperature Compensated PSPICE® and SABER© Electrical Models
         - Spice and SABER© Thermal Impedance Models
         - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 100 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 100 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID 10 A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 10 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID 7 A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID 7 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 14, 15  
Power Dissipation . . . . . . .. . . . . . PD
 49 W
Derate Above . . . . . . . . . . . . .25 0.327 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF76609D3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs160 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 425pF @ 25V
Power - Max49W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF76609D3
HUF76609D3



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