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HUF76445S3S

MOSFET 75a 60V 0.0075 Ohm Logic Level N-Ch

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SeekIC No. : 00162069 Detail

HUF76445S3S: MOSFET 75a 60V 0.0075 Ohm Logic Level N-Ch

HUF76445S3S Data Sheet

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Part Number:
HUF76445S3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0054 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.0054 Ohms
Continuous Drain Current : 75 A
Package / Case : TO-263AB


Features:

• Ultra Low On-Resistance
- rDS(ON) = 0.0065Ω, VGS = 10V
- rDS(ON) = 0.0075Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER© Electrical Models
- Spice and SABER© Thermal Impedance Models
- www.semi.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID 75 A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 75 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID 75 A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID 75 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 17, 18  
Power Dissipation . . . . . . .. . . . . . PD
 310 W
Derate Above . . . . . . . . . . . . .25 2.08 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF76445S3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 4965pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF76445S3S
HUF76445S3S



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