HUF76429S3S Selling Leads, Price trend , Fairchild Semiconductor, HUF76429S3S DataSheet download, circuit diagram from SeekIC.com

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HUF76429S3S: MOSFET 44a 60V 0.025 Ohm Logic Level N-Ch

HUF76429S3S Data Sheet

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Part Number:: HUF76429S3S
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 16 V	Continuous Drain Current :	47 A
Resistance Drain-Source RDS (on) :	0.018 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263AB	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 47 A
Resistance Drain-Source RDS (on) : 0.018 Ohms
Package / Case : TO-263AB

Features:

• Ultra Low On-Resistance
            - rDS(ON) = 0.022Ω, VGS = 10V
            - rDS(ON) = 0.025Ω, VGS = 5V
• Simulation Models
            - Temperature Compensated PSPICE® and SABER™ Electrical Models
            - Spice and SABER Thermal Impedance Models
            - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . V_DSS	60	V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . V_DGR	60	V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . V_GS	±16	V
Drain Current
Continuous (TC = 25, VGS = 5V). . . . .. . . . . I_D	44	A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . I_D	47	A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . I_D	31	A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . I_D	30	A
Pulsed Drain Current . . . . . . . . . . . . . . . . . I_DM	Figure 4
Pulsed Avalanche Rating . . . . . . . . . . . . . . . U_IS	Figures 6, 17, 18
Power Dissipation . . . . . . .. . . . . . P_D	110	W
Derate Above . . . . . . . . . . . . .25	0.74	W/
Operating and Storage Temperature . . . . . T_J, T_STG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . T_L	300
Package Body for 10s, See Techbrief TB334. . . . . . . . T_pkg	260

Parameters:

Technical/Catalog Information	HUF76429S3S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	47A
Rds On (Max) @ Id, Vgs	22 mOhm @ 47A, 10V
Input Capacitance (Ciss) @ Vds	1480pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	46nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HUF76429S3S HUF76429S3S

HUF76429S3S

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