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HUF76407P3

MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch

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SeekIC No. : 00161593 Detail

HUF76407P3: MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch

HUF76407P3 Data Sheet

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Part Number:
HUF76407P3
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.092 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.092 Ohms


Features:

• Ultra Low On-Resistance
         - rDS(ON) = 0.092Ω, VGS = 10V
         - rDS(ON) = 0.107Ω, VGS = 5V
• Simulation Models
         - Temperature Compensated PSPICE® and SABER© Electrical Models
         - Spice and SABER© Thermal Impedance Models
         - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . VDSS 60 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .. . . . . . . . . . . . VDGR 60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS ±16 V
Drain Current    
Continuous (TC = 25, VGS = 5V). . . . .. . . . . ID 12 A
Continuous (TC = 25, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID 13 A
Continuous (TC= 100, VGS = 5V) . . . . . . . . . . . . . . . ID 6 A
Continuous (TC= 100, VGS = 4.5V) (Figure 2) . . . . . . . . . . . ID 6 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . IDM Figure 4  
Pulsed Avalanche Rating . . . . . . . . . . . . . . . UIS Figures 6, 17, 18  
Power Dissipation . . . . . . .. . . . . . PD
 38 W
Derate Above . . . . . . . . . . . . .25 0.25 W/
Operating and Storage Temperature . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . TL 300
Package Body for 10s, See Techbrief TB334. . . . . . . . Tpkg 260



Parameters:

Technical/Catalog InformationHUF76407P3
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs92 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max38W
PackagingTube
Gate Charge (Qg) @ Vgs11.3nC @ 10V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUF76407P3
HUF76407P3



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